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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS5179/D High Frequency Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS5179 Motorola Preferred Device MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD PD Tstg Value 12 20 2.5 50 200 1.14 300 1.71 - 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C mW mW/C C 1 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 150C) VCEO(sus) V(BR)CBO V(BR)EBO ICBO -- -- 0.02 1.0 12 20 2.5 -- -- -- Vdc Vdc Vdc Adc ON CHARACTERISTICS DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) VBE(sat) 25 -- -- 250 0.4 1.0 -- Vdc Vdc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 MPS5179 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product(1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz) Small Signal Current Gain (IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 2.0 mAdc, VCB = 6.0 Vdc, f = 31.9 MHz) Noise Figure (See Figure 1) (IC = 1.5 mAdc, VCE = 6.0 Vdc, RS = 50 ohms, f = 200 MHz) Common-Emitter Amplifier Power Gain (See Figure 1) (VCE = 6.0 Vdc, IC = 5.0 mAdc, f = 200 MHz) 1. fT is defined as the frequency at which |hfe| extrapolates to unity. fT Ccb hfe rbCc NF Gpe 900 -- 25 3.0 -- 15 2000 1.0 300 14 5.0 -- MHz pF -- ps dB dB TYPE 1N3195 TYPE 1N3195 L3 1200 91 L1 C2 2.0 - 10 10 k 1200 Q 1.0 - 5.0 EXTERNAL SHIELD L2 0.1 F 0.001 F RFC 1.0 H 0.1 F +VCC 1200 2.0 - 10 C7 TO 50 LOAD DC COMMON FROM 50 SOURCE 0.02 F Cin 3.0 - 35 -VEE 2.0 - 10 C6 L1 1-3/4 Turns, #18 AWG, 0.5 L, 0.5 Diameter L2 2 Turns, #16 AWG, 0.5 L, 0.5 Diameter L3 2 Turns, #13 AWG, 0.25 L, 0.5 Diameter (Position 1/4 from L2) Figure 1. 200 MHz Amplifier Power Gain and Noise Figure Circuit 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS5179 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MPS5179 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 MPS5179/D Motorola Small-Signal Transistors, FETs and Diodes Device Data *MPS5179/D* |
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